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  • BUK9Y14-40B,115

BUK9Y14-40B,115

MOSFET N-CH 40V 56A LFPAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y14-40B,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 951
  • Description: MOSFET N-CH 40V 56A LFPAK (Kg)

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Details

Tags

Parameters
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.016Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 226A
Avalanche Energy Rating (Eas) 89 mJ
Height 6.35mm
Length 6.35mm
Width 6.35mm
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 85W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 85W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V
Rise Time 34ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 56A
See Relate Datesheet