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BUK9Y19-55B,115
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 85W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 85W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17.3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1992pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 46A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| Rise Time | 180ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Fall Time (Typ) | 134 ns |
| Factory Lead Time | 12 Weeks |
| Turn-Off Delay Time | 44 ns |
| Continuous Drain Current (ID) | 46A |
| Gate to Source Voltage (Vgs) | 15V |
| Contact Plating | Tin |
| Max Dual Supply Voltage | 55V |
| Drain to Source Breakdown Voltage | 55V |
| Avalanche Energy Rating (Eas) | 80 mJ |
| Mounting Type | Surface Mount |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Package / Case | SC-100, SOT-669 |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
See Relate Datesheet