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  • BUK9Y22-100E,115

BUK9Y22-100E,115

BUK9Y22-100E - N-channel 100 V, 22 mO logic level MOSFET in LFPAK56


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y22-100E,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 928
  • Description: BUK9Y22-100E - N-channel 100 V, 22 mO logic level MOSFET in LFPAK56 (Kg)

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Details

Tags

Parameters
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 147W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 15.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4640pF @ 25V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Gate Charge (Qg) (Max) @ Vgs 35.8nC @ 5V
Rise Time 32.3ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Fall Time (Typ) 31.1 ns
Package / Case SC-100, SOT-669
Turn-Off Delay Time 53.4 ns
Surface Mount YES
Number of Pins 4
Continuous Drain Current (ID) 49A
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
JEDEC-95 Code MO-235
Packaging Tape & Reel (TR)
Gate to Source Voltage (Vgs) 10V
Published 2013
Series Automotive, AEC-Q101, TrenchMOS™
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.022Ohm
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 80.8 mJ
Additional Feature AVALANCHE RATED
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
See Relate Datesheet