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  • BUK9Y25-60E,115

BUK9Y25-60E,115

BUK9Y25-60E - N-channel 60 V, 25 mO logic level MOSFET in LFPAK56


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y25-60E,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 952
  • Description: BUK9Y25-60E - N-channel 60 V, 25 mO logic level MOSFET in LFPAK56 (Kg)

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Details

Tags

Parameters
Power Dissipation 65W
Case Connection DRAIN
Turn On Delay Time 8.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Rise Time 12.1ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Package / Case SC-100, SOT-669
Vgs (Max) ±10V
Surface Mount YES
Fall Time (Typ) 10.4 ns
Turn-Off Delay Time 14.7 ns
Number of Pins 4
Continuous Drain Current (ID) 34A
JEDEC-95 Code MO-235
Transistor Element Material SILICON
Gate to Source Voltage (Vgs) 10V
Operating Temperature -55°C~175°C TJ
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 60V
Packaging Tape & Reel (TR)
Avalanche Energy Rating (Eas) 23.6 mJ
RoHS Status ROHS3 Compliant
Published 2013
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 65W Tc
Operating Mode ENHANCEMENT MODE
See Relate Datesheet