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BUK9Y25-80E,115

BUK9Y25-80E - N-channel 80 V, 27 mO logic level MOSFET in LFPAK56


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y25-80E,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 480
  • Description: BUK9Y25-80E - N-channel 80 V, 27 mO logic level MOSFET in LFPAK56 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Material Metal
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Color Black
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 95W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 10A, 5V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2703pF @ 25V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 17.1nC @ 5V
Rise Time 17.2ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 15.3 ns
Turn-Off Delay Time 23.9 ns
Continuous Drain Current (ID) 37A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.027Ohm
Drain to Source Breakdown Voltage 80V
Diameter 12.7mm
Height 15.875mm
RoHS Status ROHS3 Compliant
See Relate Datesheet