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BUK9Y38-100E,115

BUK9Y38-100E - N-channel 100 V, 38 mO logic level MOSFET in LFPAK56


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y38-100E,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 527
  • Description: BUK9Y38-100E - N-channel 100 V, 38 mO logic level MOSFET in LFPAK56 (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 94.9W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 38m Ω @ 5A, 5V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2541pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 21.6nC @ 5V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±10V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 30A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.038Ohm
Drain to Source Breakdown Voltage 100V
RoHS Status ROHS3 Compliant
See Relate Datesheet