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  • BUK9Y58-75B,115

BUK9Y58-75B,115

On a Reel of 1500, N-Channel MOSFET, 20.7 A, 75 V, 4 + Tab-Pin LFPAK Nexperia BUK9Y58-75B, 115


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y58-75B,115
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 194
  • Description: On a Reel of 1500, N-Channel MOSFET, 20.7 A, 75 V, 4 + Tab-Pin LFPAK Nexperia BUK9Y58-75B, 115 (Kg)

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Details

Tags

Parameters
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 75V
Drain-source On Resistance-Max 0.061Ohm
Pulsed Drain Current-Max (IDM) 82.9A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 60.4W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 53m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1137pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.73A Tc
Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 5V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±15V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 20.73A
JEDEC-95 Code MO-235
See Relate Datesheet