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  • BUK9Y8R5-80EX

BUK9Y8R5-80EX

MOSFET Transistor, N Channel, 100 A, 80 V, 0.0058 ohm, 10 V, 1.7 V


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9Y8R5-80EX
  • Package: SC-100, SOT-669
  • Datasheet: PDF
  • Stock: 262
  • Description: MOSFET Transistor, N Channel, 100 A, 80 V, 0.0058 ohm, 10 V, 1.7 V (Kg)

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Details

Tags

Parameters
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0085Ohm
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Material Brass
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination Crimp
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Plating Gold, Tin
Power Dissipation-Max 238W Tc
Element Configuration Single
Wire Gauge (Max) 18 AWG
Wire Gauge (Min) 14 AWG
Operating Mode ENHANCEMENT MODE
Power Dissipation 238W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 8167pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 54.7nC @ 5V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 45 ns
See Relate Datesheet