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BUL1203EFP

BUL1203EFP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-BUL1203EFP
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 472
  • Description: BUL1203EFP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Collector Emitter Breakdown Voltage 550V
Collector Base Voltage (VCBO) 1.2kV
Emitter Base Voltage (VEBO) 9V
hFE Min 10
RoHS Status ROHS3 Compliant
Lifecycle Status NRND (Last Updated: 7 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 36W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BUL1203
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Case Connection ISOLATED
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 550V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 9 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3A
See Relate Datesheet