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BUV21G

BUV21G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-BUV21G
  • Package: TO-204AE
  • Datasheet: PDF
  • Stock: 128
  • Description: BUV21G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AE
Number of Pins 2
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2005
Series SWITCHMODE™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 200V
Max Power Dissipation 250W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 40A
Frequency 8MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 8MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 40A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 12A 2V
Current - Collector Cutoff (Max) 3mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3A, 25A
Collector Emitter Breakdown Voltage 200V
Transition Frequency 8MHz
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 7V
hFE Min 20
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet