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BUZ30AHXKSA1

Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BUZ30AHXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 403
  • Description: Trans MOSFET N-CH 200V 21A 3-Pin(3+Tab) TO-220 Tube (Kg)

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 21A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Pulsed Drain Current-Max (IDM) 84A
Avalanche Energy Rating (Eas) 450 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 130m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Halogen Free
See Relate Datesheet