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BUZ31H3046XKSA1

MOSFET N-CH 200V 14.5A TO262-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BUZ31H3046XKSA1
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 351
  • Description: MOSFET N-CH 200V 14.5A TO262-3 (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 95W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 95W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 9A, 5V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14.5A Tc
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 14.5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain-source On Resistance-Max 0.2Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 58A
Contact Plating Tin
Avalanche Energy Rating (Eas) 200 mJ
Mount Through Hole
Mounting Type Through Hole
Height 9.45mm
Length 10.36mm
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Width 4.52mm
Number of Pins 3
RoHS Status RoHS Compliant
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Lead Free Lead Free
Packaging Tube
Published 2005
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
See Relate Datesheet