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  • BUZ31HXKSA1

BUZ31HXKSA1

Trans MOSFET N-CH 200V 14.5A 3-Pin(3+Tab) TO-220 Tube


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BUZ31HXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 659
  • Description: Trans MOSFET N-CH 200V 14.5A 3-Pin(3+Tab) TO-220 Tube (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series SIPMOS®
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 95W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 95W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 9A, 5V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14.5A Tc
Rise Time 50ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 14.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.2Ohm
Pulsed Drain Current-Max (IDM) 58A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 200 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet