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BVSS123LT1G

BVSS123LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-BVSS123LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 988
  • Description: BVSS123LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Factory Lead Time 4 Weeks
Continuous Drain Current (ID) 170mA
Gate to Source Voltage (Vgs) 20V
Lifecycle Status ACTIVE (Last Updated: 11 hours ago)
Drain-source On Resistance-Max 6Ohm
Contact Plating Tin
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Lead Free Lead Free
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Pin Count 3
Number of Elements 1
Power Dissipation-Max 225mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 225mW
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Drain to Source Voltage (Vdss) 100V
See Relate Datesheet