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C3M0120100K

MOSFET N-CH 1000V 22A TO247-4L


  • Manufacturer: Cree/Wolfspeed
  • Origchip NO: 163-C3M0120100K
  • Package: TO-247-4
  • Datasheet: PDF
  • Stock: 173
  • Description: MOSFET N-CH 1000V 22A TO247-4L (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-4
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Series C3M™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology SiCFET (Silicon Carbide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard IEC-60747-8-4
JESD-30 Code R-PSFM-T4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 155m Ω @ 15A, 15V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 15V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) ±15V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.155Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 1000V
RoHS Status RoHS Compliant
See Relate Datesheet