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CM200DY-24H
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 7 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 1.5kW |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Number of Elements | 2 |
| Configuration | Half Bridge |
| Element Configuration | Dual |
| Power Dissipation | 1.5kW |
| Case Connection | ISOLATED |
| Power - Max | 1500W |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 3.4V |
| Max Collector Current | 200A |
| Current - Collector Cutoff (Max) | 1mA |
| Mount | Chassis Mount, Screw |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Mounting Type | Chassis Mount |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Package / Case | Module |
| Input Capacitance | 40nF |
| Number of Pins | 7 |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 200A |
| Transistor Element Material | SILICON |
| NTC Thermistor | No |
| Operating Temperature | -40°C~150°C TJ |
| Gate-Emitter Voltage-Max | 20V |
| Published | 1998 |
| Input Capacitance (Cies) @ Vce | 40nF @ 10V |
| Series | IGBTMOD™ |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet