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CPH6347-TL-W

MOSFET P-CH 20V 6A CPH6


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-CPH6347-TL-W
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 924
  • Description: MOSFET P-CH 20V 6A CPH6 (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Additional Feature ESD PROTECTED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.6W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 39m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 4.5V
Rise Time 48ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 78 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.039Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 20V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet