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CSD13383F4

MOSFET N-CH 12V 3PICOSTAR


  • Manufacturer:
  • Origchip NO: 815-CSD13383F4
  • Package: 3-XFDFN
  • Datasheet: -
  • Stock: 988
  • Description: MOSFET N-CH 12V 3PICOSTAR (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FemtoFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD13383
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 39 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 44m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 291pF @ 6V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Gate Charge (Qg) (Max) @ Vgs 2.6nC @ 4.5V
Rise Time 123ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 315 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage 12V
Length 1.035mm
Width 635μm
RoHS Status ROHS3 Compliant
Factory Lead Time 6 Weeks
Lead Free Lead Free
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
See Relate Datesheet