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  • CSD17313Q2

CSD17313Q2

CSD17313Q2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi


  • Manufacturer:
  • Origchip NO: 815-CSD17313Q2
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 865
  • Description: CSD17313Q2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi (Kg)

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Details

Tags

Parameters
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 20A
Height 800μm
Length 2mm
Width 2mm
Thickness 750μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17313
Pin Count 8
Number of Elements 1
Power Dissipation-Max 2.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.3W
Case Connection DRAIN
Turn On Delay Time 2.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 4A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V
Rise Time 3.9ns
Drive Voltage (Max Rds On,Min Rds On) 3V 8V
Vgs (Max) +10V, -8V
Fall Time (Typ) 1.3 ns
Turn-Off Delay Time 4.2 ns
Continuous Drain Current (ID) 5A
See Relate Datesheet