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CSD17483F4

CSD17483F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi


  • Manufacturer:
  • Origchip NO: 815-CSD17483F4
  • Package: 3-XFDFN
  • Datasheet: -
  • Stock: 851
  • Description: CSD17483F4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17483
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 500mA, 8V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.5A Ta
Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 4.5V
Rise Time 1.3ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 10.6 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 5A
Height 350μm
Length 1.035mm
Width 635μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet