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  • CSD17551Q3A

CSD17551Q3A

CSD17551Q3A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi


  • Manufacturer:
  • Origchip NO: 815-CSD17551Q3A
  • Package: 8-PowerVDFN
  • Datasheet: -
  • Stock: 965
  • Description: CSD17551Q3A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi (Kg)

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Details

Tags

Parameters
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.6W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.6W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 12 ns
Factory Lead Time 12 Weeks
Continuous Drain Current (ID) 12A
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Threshold Voltage 1.6V
Contact Plating Tin
Gate to Source Voltage (Vgs) 20V
Mount Surface Mount
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 30V
Package / Case 8-PowerVDFN
Max Junction Temperature (Tj) 150°C
Number of Pins 8
Nominal Vgs 1.6 V
Transistor Element Material SILICON
Height 900μm
Operating Temperature -55°C~150°C TJ
Length 3.3mm
Packaging Tape & Reel (TR)
Width 3.3mm
Thickness 800μm
Series NexFET™
Radiation Hardening No
JESD-609 Code e3
REACH SVHC Unknown
Pbfree Code yes
RoHS Status ROHS3 Compliant
Part Status Active
Lead Free Lead Free
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17551
See Relate Datesheet