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CSD17577Q3A

MOSFET N-CH 30V 35A 8VSON


  • Manufacturer:
  • Origchip NO: 815-CSD17577Q3A
  • Package: 8-PowerVDFN
  • Datasheet: -
  • Stock: 802
  • Description: MOSFET N-CH 30V 35A 8VSON (Kg)

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17577
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.8W Ta 53W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 53W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.8m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Ta
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 31ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 239A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 39 mJ
Max Junction Temperature (Tj) 150°C
Height 900μm
Length 3.3mm
Width 3.3mm
Thickness 800μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
See Relate Datesheet