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CSD18532Q5B

CSD18532Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi


  • Manufacturer:
  • Origchip NO: 815-CSD18532Q5B
  • Package: 8-PowerTDFN
  • Datasheet: -
  • Stock: 247
  • Description: CSD18532Q5B datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5070pF @ 30V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 7.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.1 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0043Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 320 mJ
Max Junction Temperature (Tj) 150°C
Height 1.05mm
Length 5mm
Width 6mm
Thickness 950μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18532
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.2W Ta 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 5.8 ns
FET Type N-Channel
See Relate Datesheet