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  • CSD25213W10

CSD25213W10

CSD25213W10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi


  • Manufacturer:
  • Origchip NO: 815-CSD25213W10
  • Package: 4-UFBGA, DSBGA
  • Datasheet: -
  • Stock: 350
  • Description: CSD25213W10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA, DSBGA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Base Part Number CSD25213
Number of Channels 1
Power Dissipation-Max 1W Ta
Element Configuration Single
Operating Mode -0.85
Power Dissipation 1W
Turn On Delay Time 510 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 47m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 478pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.6A Ta
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V
Rise Time 520ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Fall Time (Typ) 970 ns
Turn-Off Delay Time 1 μs
Continuous Drain Current (ID) -1.6A
Gate to Source Voltage (Vgs) -6V
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Height 625μm
Length 0m
Width 0m
Thickness 650μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet