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  • CSD25401Q3

CSD25401Q3

CSD25401Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi


  • Manufacturer:
  • Origchip NO: 815-CSD25401Q3
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 284
  • Description: CSD25401Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi (Kg)

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Details

Tags

Parameters
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Termination SMD/SMT
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD25401
Pin Count 8
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection SOURCE
Turn On Delay Time 8.1 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.7m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 4.5V
Rise Time 3.9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 12.6 ns
Turn-Off Delay Time 13.5 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 60A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage 20V
Nominal Vgs 850 mV
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet