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DDA114EU-7

Bipolar Transistors - Pre-Biased DUAL PNP 200mW


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DDA114EU-7
  • Package: SOT-363
  • Datasheet: PDF
  • Stock: 933
  • Description: Bipolar Transistors - Pre-Biased DUAL PNP 200mW (Kg)

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Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 200mW
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
DC Current Gain-Min (hFE) 30
Continuous Collector Current -100mA
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Mount Surface Mount
Package / Case SOT-363
Number of Pins 6
Transistor Element Material SILICON
See Relate Datesheet