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DMB2227A-7

Bipolar Transistors - BJT 300mW +/-600mA


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMB2227A-7
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 109
  • Description: Bipolar Transistors - BJT 300mW +/-600mA (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 29.993795mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Voltage - Collector Emitter Breakdown (Max) 40V 60V
Transition Frequency 300MHz
Max Breakdown Voltage 60V
Frequency - Transition 300MHz 200MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 5V
hFE Min 35
Height 1.1mm
Length 3mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet