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DME505010R

Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm


  • Manufacturer: Panasonic Electronic Components
  • Origchip NO: 590-DME505010R
  • Package: 6-SMD, Flat Leads
  • Datasheet: PDF
  • Stock: 526
  • Description: Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 150mW
Reach Compliance Code unknown
Base Part Number DME50501
Polarity NPN, PNP
Element Configuration Dual
Power - Max 150mW
Gain Bandwidth Product 150MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Current - Collector (Ic) (Max) 100mA
Max Breakdown Voltage 50V
hFE Min 210
Continuous Collector Current -100mA
Height 600μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
See Relate Datesheet