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  • DMG1012T-7

DMG1012T-7

MOSFET N-CH 20V 630MA SOT-523


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMG1012T-7
  • Package: SOT-523
  • Datasheet: PDF
  • Stock: 152
  • Description: MOSFET N-CH 20V 630MA SOT-523 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Supplier Device Package SOT-523
Weight 2.012816mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 400MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 280mW Ta
Element Configuration Single
Power Dissipation 280mW
Turn On Delay Time 5.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C 630mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 4.5V
Rise Time 7.4ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 12.3 ns
Turn-Off Delay Time 26.7 ns
Continuous Drain Current (ID) 630mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 20V
Input Capacitance 60.67pF
Drain to Source Resistance 300mOhm
Rds On Max 400 mΩ
Height 800μm
Length 1.7mm
Width 850μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet