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DMG1012TQ-7

Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMG1012TQ-7
  • Package: SOT-523
  • Datasheet: PDF
  • Stock: 901
  • Description: Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 280mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 280mW
Turn On Delay Time 5.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C 630mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Turn-Off Delay Time 26.7 ns
Continuous Drain Current (ID) 630mA
Gate to Source Voltage (Vgs) 6V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Height 900μm
RoHS Status ROHS3 Compliant
See Relate Datesheet