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DMG1029SV-7

MOSFET N/P-CH 60V SOT563


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMG1029SV-7
  • Package: SOT-563, SOT-666
  • Datasheet: PDF
  • Stock: 191
  • Description: MOSFET N/P-CH 60V SOT563 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 3.005049mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 4Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory Other Transistors
Max Power Dissipation 450mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMG1029
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 450mW
Turn On Delay Time 5.5 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA 360mA
Gate Charge (Qg) (Max) @ Vgs 0.3nC @ 4.5V
Rise Time 7.9ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 11.6 ns
Turn-Off Delay Time 10.6 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.37A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 5 pF
Height 600μm
Length 1.7mm
Width 1.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet