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DMG204020R

Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm


  • Manufacturer: Panasonic Electronic Components
  • Origchip NO: 590-DMG204020R
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 255
  • Description: Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
HTS Code 8541.21.00.75
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DMG20402
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power - Max 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 160MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 160MHz
Max Breakdown Voltage 50V
Frequency - Transition 160MHz 130MHz
Emitter Base Voltage (VEBO) -1.5V
hFE Min 120
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Discontinued
See Relate Datesheet