English

All Products

View All >>
  • DMG2307L-7

DMG2307L-7

MOSFET MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMG2307L-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 704
  • Description: MOSFET MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Number of Channels 1
Power Dissipation-Max 760mW Ta
Element Configuration Single
Factory Lead Time 5 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Operating Mode ENHANCEMENT MODE
Package / Case TO-236-3, SC-59, SOT-23-3
Power Dissipation 1.36W
Turn On Delay Time 4.8 ns
Number of Pins 3
Weight 7.994566mg
FET Type P-Channel
Transistor Element Material SILICON
Transistor Application SWITCHING
Operating Temperature -55°C~150°C TJ
Rds On (Max) @ Id, Vgs 90m Ω @ 2.5A, 10V
Packaging Tape & Reel (TR)
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 371.3pF @ 15V
Published 2011
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
JESD-609 Code e3
Rise Time 7.3ns
Pbfree Code yes
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Part Status Not For New Designs
Vgs (Max) ±20V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Fall Time (Typ) 13.4 ns
Turn-Off Delay Time 22.4 ns
Continuous Drain Current (ID) 3.8A
Number of Terminations 3
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2.5A
Height 1mm
ECCN Code EAR99
Length 3mm
Terminal Finish Matte Tin (Sn)
Width 1.4mm
Additional Feature HIGH RELIABILITY
Radiation Hardening No
Subcategory Other Transistors
REACH SVHC No SVHC
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
See Relate Datesheet