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DMG564010R

Bipolar Transistors - BJT Composite Transistor w/ Built n Resistor


  • Manufacturer: Panasonic Electronic Components
  • Origchip NO: 590-DMG564010R
  • Package: 6-SMD, Flat Leads
  • Datasheet: PDF
  • Stock: 271
  • Description: Bipolar Transistors - BJT Composite Transistor w/ Built n Resistor (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISITANCE RATIO 1
HTS Code 8541.21.00.95
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DMG56401
JESD-30 Code R-PDSO-F6
Number of Elements 2
Polarity NPN, PNP
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 35
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10k Ω
RoHS Status RoHS Compliant
See Relate Datesheet