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  • DMG7401SFG-7

DMG7401SFG-7

MOSFET P-CH 30V 9.8A POWERDI3333


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMG7401SFG-7
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 979
  • Description: MOSFET P-CH 30V 9.8A POWERDI3333 (Kg)

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Details

Tags

Parameters
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Weight 72.007789mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code S-PDSO-N5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 940mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 12A, 20V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2987pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.8A Ta
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 15.4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 20V
Vgs (Max) ±25V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 9.8A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Height 850μm
Length 3.35mm
Width 3.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet