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DMN1019USN-13

MOSFET N-CH 12V 9.3A SC59


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN1019USN-13
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 376
  • Description: MOSFET N-CH 12V 9.3A SC59 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 7.994566mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 680mW Ta
Element Configuration Single
Turn On Delay Time 7.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 9.7A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2426pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.3A Ta
Gate Charge (Qg) (Max) @ Vgs 50.6nC @ 8V
Rise Time 57.6ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 2.5V
Vgs (Max) ±8V
Fall Time (Typ) 16.8 ns
Turn-Off Delay Time 22.2 ns
Continuous Drain Current (ID) 9.3A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
RoHS Status ROHS3 Compliant
See Relate Datesheet