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DMN1019USN-7

MOSFET N-CH 12V 9.3A SC59


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN1019USN-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 312
  • Description: MOSFET N-CH 12V 9.3A SC59 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Capacitance 2.426nF
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 680mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 9.7A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2426pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.3A Ta
Gate Charge (Qg) (Max) @ Vgs 50.6nC @ 8V
Rise Time 57.6ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 2.5V
Vgs (Max) ±8V
Fall Time (Typ) 16.8 ns
Turn-Off Delay Time 22.2 ns
Continuous Drain Current (ID) 9.3A
Gate to Source Voltage (Vgs) 4.5V
Drain to Source Breakdown Voltage 12V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet