All Products

DMN2005LP4K-7

Single N-Channel 20 V 1.5 Ohm Enhancement Mode Transistor-DFN-3


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2005LP4K-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 832
  • Description: Single N-Channel 20 V 1.5 Ohm Enhancement Mode Transistor-DFN-3 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Case Connection DRAIN
Turn On Delay Time 4.06 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 900mV @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 41pF @ 3V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Vgs (Max) ±10V
Turn-Off Delay Time 13.7 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.2A
Factory Lead Time 15 Weeks
Drain to Source Breakdown Voltage 20V
Height 350μm
Length 1mm
Contact Plating Gold
Width 600μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Mount Surface Mount
Lead Free Lead Free
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.5Ohm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 400mW Ta
Element Configuration Single
See Relate Datesheet