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  • DMN2005LP4K-7

DMN2005LP4K-7

Single N-Channel 20 V 1.5 Ohm Enhancement Mode Transistor-DFN-3


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2005LP4K-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 832
  • Description: Single N-Channel 20 V 1.5 Ohm Enhancement Mode Transistor-DFN-3 (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Case Connection DRAIN
Turn On Delay Time 4.06 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 900mV @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 41pF @ 3V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
Vgs (Max) ±10V
Turn-Off Delay Time 13.7 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.2A
Factory Lead Time 15 Weeks
Drain to Source Breakdown Voltage 20V
Height 350μm
Length 1mm
Contact Plating Gold
Width 600μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Mount Surface Mount
Lead Free Lead Free
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.5Ohm
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 400mW Ta
Element Configuration Single
See Relate Datesheet