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  • DMN2005UFG-13

DMN2005UFG-13

MOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2005UFG-13
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 521
  • Description: MOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05W (Kg)

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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Weight 72.007789mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 1.05W Ta
Element Configuration Single
Turn On Delay Time 12.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.6m Ω @ 13.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6495pF @ 10V
Current - Continuous Drain (Id) @ 25°C 18.1A Tc
Gate Charge (Qg) (Max) @ Vgs 164nC @ 10V
Rise Time 25.7ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 114 ns
Continuous Drain Current (ID) 18.1A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
RoHS Status ROHS3 Compliant
See Relate Datesheet