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  • DMN2015UFDE-7

DMN2015UFDE-7

MOSFET N-CH 20V 10.5A U-DFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2015UFDE-7
  • Package: 6-PowerUDFN
  • Datasheet: PDF
  • Stock: 789
  • Description: MOSFET N-CH 20V 10.5A U-DFN (Kg)

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Details

Tags

Parameters
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 660mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.6m Ω @ 8.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1779pF @ 10V
Current - Continuous Drain (Id) @ 25°C 10.5A Ta
Gate Charge (Qg) (Max) @ Vgs 45.6nC @ 10V
Rise Time 16.8ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 10.9 ns
Turn-Off Delay Time 43.6 ns
Continuous Drain Current (ID) 10.5A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 9.4A
Drain to Source Breakdown Voltage 20V
Height 580μm
Length 2.05mm
Width 2.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerUDFN
Number of Pins 6
Transistor Element Material SILICON
See Relate Datesheet