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  • DMN2028USS-13

DMN2028USS-13

20V N-Channel Enhancement MOSFET SOIC8


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2028USS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 957
  • Description: 20V N-Channel Enhancement MOSFET SOIC8 (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Vgs (Max) ±8V
Number of Terminations 8
Fall Time (Typ) 12.33 ns
ECCN Code EAR99
Turn-Off Delay Time 35.89 ns
Continuous Drain Current (ID) 9.8A
Terminal Finish Matte Tin (Sn)
Threshold Voltage 1V
Additional Feature ESD PROTECTION, HIGH RELIABILITY
Gate to Source Voltage (Vgs) 12V
Subcategory FET General Purpose Powers
Drain Current-Max (Abs) (ID) 5.6A
Technology MOSFET (Metal Oxide)
Drain-source On Resistance-Max 0.02Ohm
Terminal Position DUAL
Drain to Source Breakdown Voltage 20V
Height 1.5mm
Terminal Form GULL WING
Length 5mm
Width 4mm
Peak Reflow Temperature (Cel) 260
Radiation Hardening No
Time@Peak Reflow Temperature-Max (s) 40
REACH SVHC No SVHC
Pin Count 8
RoHS Status ROHS3 Compliant
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.56W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
Turn On Delay Time 11.67 ns
FET Type N-Channel
Factory Lead Time 16 Weeks
Mount Surface Mount
Transistor Application SWITCHING
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Rds On (Max) @ Id, Vgs 20m Ω @ 9.4A, 4.5V
Number of Pins 8
Weight 73.992255mg
Vgs(th) (Max) @ Id 1.3V @ 250μA
Transistor Element Material SILICON
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
Operating Temperature -55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C 7.3A Ta
Packaging Tape & Reel (TR)
Published 2017
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 4.5V
JESD-609 Code e3
Pbfree Code yes
Rise Time 12.49ns
Part Status Active
See Relate Datesheet