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DMN2041L-7

MOSFET N-CH 20V 6.4A SOT23


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2041L-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 878
  • Description: MOSFET N-CH 20V 6.4A SOT23 (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 41mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 780mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 780mW
Turn On Delay Time 4.69 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.4A Ta
Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 10V
Rise Time 13.19ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6.43 ns
Turn-Off Delay Time 22.1 ns
Continuous Drain Current (ID) 6.4A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet