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DMN2100UDM-7

MOSFET N-CH 20V 3.3A SOT-26


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2100UDM-7
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 259
  • Description: MOSFET N-CH 20V 3.3A SOT-26 (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 53 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.3A Ta
Rise Time 78ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 234 ns
Turn-Off Delay Time 561 ns
Continuous Drain Current (ID) 3.3A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.055Ohm
Drain to Source Breakdown Voltage 20V
Feedback Cap-Max (Crss) 84 pF
Height 1.1mm
Length 3mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet