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  • DMN21D2UFB-7B

DMN21D2UFB-7B

MOSFET N-CH 20V 0.76A 3DFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN21D2UFB-7B
  • Package: 3-UFDFN
  • Datasheet: PDF
  • Stock: 199
  • Description: MOSFET N-CH 20V 0.76A 3DFN (Kg)

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Details

Tags

Parameters
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 380mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 990m Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 27.6pF @ 16V
Current - Continuous Drain (Id) @ 25°C 760mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.93nC @ 10V
Rise Time 4.2ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 9.8 ns
Turn-Off Delay Time 19.6 ns
Continuous Drain Current (ID) 760mA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.76A
Drain-source On Resistance-Max 0.99Ohm
DS Breakdown Voltage-Min 20V
Height 480μm
Length 1.08mm
Width 675μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
See Relate Datesheet