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  • DMN2230U-7

DMN2230U-7

MOSFET N-CH 20V 2A SOT23-3


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2230U-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 284
  • Description: MOSFET N-CH 20V 2A SOT23-3 (Kg)

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Details

Tags

Parameters
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 600mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 600mW
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Factory Lead Time 19 Weeks
Contact Plating Tin
Rds On (Max) @ Id, Vgs 110m Ω @ 2.5A, 4.5V
Mount Surface Mount
Vgs(th) (Max) @ Id 1V @ 250μA
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds 188pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Number of Pins 3
Weight 7.994566mg
Rise Time 3.8ns
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Operating Temperature -55°C~150°C TJ
Vgs (Max) ±12V
Packaging Tape & Reel (TR)
Fall Time (Typ) 3.8 ns
Published 2012
Turn-Off Delay Time 19.6 ns
JESD-609 Code e3
Continuous Drain Current (ID) 2A
Pbfree Code yes
Gate to Source Voltage (Vgs) 12V
Part Status Active
Drain Current-Max (Abs) (ID) 2A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drain to Source Breakdown Voltage 20V
Number of Terminations 3
Height 1mm
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Length 2.9mm
Subcategory FET General Purpose Power
Width 1.3mm
Technology MOSFET (Metal Oxide)
Radiation Hardening No
Terminal Position DUAL
REACH SVHC No SVHC
Terminal Form GULL WING
RoHS Status ROHS3 Compliant
Peak Reflow Temperature (Cel) 260
Lead Free Lead Free
Time@Peak Reflow Temperature-Max (s) 40
See Relate Datesheet