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DMN2250UFB-7B

MOSFET N-CH 20V 1.35A 3DFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2250UFB-7B
  • Package: 3-UFDFN
  • Datasheet: PDF
  • Stock: 191
  • Description: MOSFET N-CH 20V 1.35A 3DFN (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
JESD-609 Code e4
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 94pF @ 16V
Current - Continuous Drain (Id) @ 25°C 1.35A Ta
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V
Rise Time 6.1ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 25.4 ns
Turn-Off Delay Time 59.4 ns
Continuous Drain Current (ID) 1.35A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.25Ohm
DS Breakdown Voltage-Min 20V
Height 480μm
Length 1.08mm
Width 675μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet