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  • DMN2300UFD-7

DMN2300UFD-7

MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3,3K


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2300UFD-7
  • Package: 3-UDFN
  • Datasheet: PDF
  • Stock: 168
  • Description: MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3,3K (Kg)

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Details

Tags

Parameters
Rise Time 6.93ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 10.62 ns
Turn-Off Delay Time 21.71 ns
Continuous Drain Current (ID) 1.73A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.2Ohm
DS Breakdown Voltage-Min 20V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 470mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4.92 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 900mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 67.62pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.21A Ta
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
See Relate Datesheet