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DMN26D0UFB4-7

MOSFET N-CH 20V 230MA DFN


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN26D0UFB4-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 616
  • Description: MOSFET N-CH 20V 230MA DFN (Kg)

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Details

Tags

Parameters
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 15.2 ns
Turn-Off Delay Time 13.4 ns
Continuous Drain Current (ID) 240mA
Gate to Source Voltage (Vgs) 10V
Drain Current-Max (Abs) (ID) 0.24A
DS Breakdown Voltage-Min 20V
Height 350μm
Length 1.05mm
Width 650μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2017
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 10Ohm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Case Connection DRAIN
Turn On Delay Time 3.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14.1pF @ 15V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Rise Time 7.9ns
See Relate Datesheet