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  • DMN2990UFA-7B

DMN2990UFA-7B

MOSFET N-CH 20V 0.51A


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN2990UFA-7B
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 873
  • Description: MOSFET N-CH 20V 0.51A (Kg)

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Details

Tags

Parameters
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Factory Lead Time 15 Weeks
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 990m Ω @ 100mA, 4.5V
Mount Surface Mount
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 27.6pF @ 16V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 510mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Package / Case 3-XFDFN
Rise Time 3.3ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Number of Pins 3
Vgs (Max) ±8V
Fall Time (Typ) 6.4 ns
Turn-Off Delay Time 19 ns
Transistor Element Material SILICON
Continuous Drain Current (ID) 510mA
Gate to Source Voltage (Vgs) 8V
Operating Temperature -55°C~150°C TJ
Drain-source On Resistance-Max 0.99Ohm
Drain to Source Breakdown Voltage 20V
Feedback Cap-Max (Crss) 5.6 pF
Height 350μm
Length 650μm
Packaging Cut Tape (CT)
Width 850μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Published 2013
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 400mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet