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  • DMN3010LSS-13

DMN3010LSS-13

MOSFET N-CH 30V 16A 8-SOIC


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-DMN3010LSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 444
  • Description: MOSFET N-CH 30V 16A 8-SOIC (Kg)

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Details

Tags

Parameters
Operating Temperature -55°C~150°C TJ
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage 30V
Packaging Tape & Reel (TR)
Pulsed Drain Current-Max (IDM) 64A
Height 1.5mm
Published 2008
Length 5.3mm
Width 4.1mm
JESD-609 Code e3
Radiation Hardening No
REACH SVHC No SVHC
Pbfree Code yes
RoHS Status ROHS3 Compliant
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 5.6 ns
FET Type N-Channel
Factory Lead Time 16 Weeks
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 16A, 10V
Mount Surface Mount
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2096pF @ 15V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 16A Ta
Package / Case 8-SOIC (0.154, 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs 43.7nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Number of Pins 8
Fall Time (Typ) 27 ns
Turn-Off Delay Time 45 ns
Weight 850.995985mg
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Transistor Element Material SILICON
See Relate Datesheet